uh3b, uh3c & uh3d vishay general semiconductor document number: 89109 revision: 03-jun-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 new product surface mount ultrafast rectifier features ? low profile package ? ideal for automated placement ? oxide planar chip junction ? ultrafast recovery times for high frequency ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in secondary rectification and freewheeling for ultrafast switching speeds of ac-to-ac and dc-to-dc converters in high temperature conditions for both consumer and automotive applications. mechanical data case: do-214ab (smc) epoxy meets ul 94 v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec-q101 qualified), meets jesd 201 class 2 whisker test polarity: color band denotes cathode end notes: (1) free air, mounted on recommended copper pad area (2) units mounted on p.c.b. with 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pad area primary characteristics i f(av) 3.0 a v rrm 100 v, 150 v, 200 v i fsm 80 a t rr 25 ns v f at i f = 3.0 a 0.75 v t j max. 175 c do-214ab (smc) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol uh3b uh3c uh3d unit device marking code hb hc hd maximum repetitive peak reverse voltage v rrm 100 150 200 v maximum average forward rectified current (fig. 1) i f(av) 2.5 (1) 3.0 (2) a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 80 a operating junction and storage temperature range t j , t stg - 55 to + 175 c
new product uh3b, uh3c & uh3d vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89109 revision: 03-jun-09 2 notes: (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms note: (1) free air, mounted on recommended copper pad area. thermal resistance r ja - junction to ambient, r jm - junction to mount note: (1) aec-q101 qualified electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage (1) i f = 1.5 a i f = 3.0 a t a = 25 c v f 0.85 0.95 - 1.05 v i f = 1.5 a i f = 3.0 a t a = 125 c 0.65 0.75 - 0.90 reverse current (2) rated v r t a = 25 c t a = 125 c i r - 15 5 100 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, l rr = 0.25 a t a = 25 c t rr 14 25 ns typical reverse recovery time i f = 1.0 a, di/dt = 50 a/s, v r = 30 v, l rr = 0.1 i rm 23 40 typical softness factor (t b /t a ) i f = 3.0 a, di/dt = 200 a/s, v r = 200 v t a = 125 c s0.2 - typical reverse recovery current i rm 5.0 7.0 a typical stored charge q rr 60 - nc typical junction capacitance 4.0 v, 1 mhz c j 42 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol uh3b uh3c uh3d unit typical thermal resistance (1) r ja r jm 95 12 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode uh3d-e3/57t 0.236 57t 850 7" diameter plastic tape and reel uh3d-e3/9at 0.236 9at 3500 13" diameter plastic tape and reel uh3dhe3/57t (1) 0.236 57t 850 7" diameter plastic tape and reel uh3dhe3/9at (1) 0.236 9at 3500 13" diameter plastic tape and reel
new product uh3b, uh3c & uh3d vishay general semiconductor document number: 89109 revision: 03-jun-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 ratings and characteristics curves (t a = 25 c unless otherwise noted) figure 1. maximum forward current derating curve figure 2. forward power loss characteristics figure 3. typical instantaneous forward characteristics 0 3.5 0 25 50 75 100 125 150 175 a v erage for w ard rectified c u rrent (a) t m - mo u nt temperat u re (c) resisti v e or ind u cti v e load 3.0 2.5 2.0 1.5 0.5 t m meas u red at mo u nt of terminal 1.0 0 0.5 2.0 3.0 0 3.5 0.5 a v erage po w er loss ( w ) a v erage for w ard c u rrent (a) 3.0 2.0 1.5 1.0 d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 1.0 1.5 2.5 2.5 t a = 150 c t a = 125 c t a = 100 c t a = 25 c 0.2 0.4 0.6 0. 8 1.0 1.2 1.6 instantaneo u s for w ard v oltage ( v ) instan taneo u s for w ard c u rrent (a) 100 10 1 0.1 0.01 1.4 t a = 175 c figure 4. typical reverse characteristics figure 5. typical junction capacitance figure 6. typical transient thermal impedance 0.1 1 10 100 1000 t a = 150 c t a = 125 c t a = 100 c t a = 25 c percent of rated peak re v erse v oltage ( % ) 20 40 60 8 0 100 0.01 instantaneo u s re v erse c u rrent ( a) 10 30 50 70 90 t a = 175 c re v erse v oltage ( v ) j u nction capacitance (pf) 0.1 10 1 100 10 100 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p t - p u lse d u ration (s) transient thermal impedance (c/ w ) 0.001 10 1 100 100 1000 1 10 0.1 j u nction to am b ient 0.01
new product uh3b, uh3c & uh3d vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89109 revision: 03-jun-09 4 package outline dimensions in inches (millimeters) cathode band do-214ab (smc) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.2 8 0 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.00 8 (0.2) 0 (0) 0.320 ( 8 .13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) mountin g pad layout 0.126 (3.20) mi n . 0.060 (1.52) mi n . 0.1 8 5 (4.69) max. 0.320 ref.
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